Paskova T. (Ed.) Nitrides with Nonpolar Surfaces: Growth, Properties, and Devices

Wiley-VCH Verlag GmbH & Co., 2008. – 461 p. – ISBN: 978-3-527-40768-2.This volume presents major developments in nonpolar nitrides over the last five to six years. Extended defects, namely threading dislocations, basal plane stacking faults, and associated partial threading dislocations, have been a major obstacle to the development of nonpolar and semipolar nitrides, as described by Liliental–Weber and Kr¨oger. Haskell, Fini, and Nakamura write about efforts to reduce extended defect densities via lateral epitaxial overgrowth (LEO) in HVPE. Grzegory and coworkers present the work from the Polish Academy of Sciences to produce nearly defect-free nonpolar bulk GaN substrates. The reduced in-plane symmetry of nonpolar orientations,
in comparison to the usual c-plane GaN orientations, facilitates polarized light detection and emission as described by Grahn. The early efforts on nonpolar LEDs are described by Chakbraborty, Chichibu, and Mishra. Funato, Kawakami, Narukawa, and Mukai present the Kyoto University and Nichia’s work on semipolar LEDs on inclined semipolar facets in c-plane LEO GaN
structures and on bulk semipolar substrates – the latter representing the first reports of high-performance semipolar emitters.Nitride Materials and Devices with Nonpolar Surfaces: Development and Prospects
Growth
Growth of Planar and Reduced-defect Density Nonpolar GaN Films by Hydride Vapor Phase Epitaxy
Nonpolar GaN Quasi-Wafers Sliced from Bulk GaN Crystals Grown by High-Pressure Solution and HVPE Methods
Heteroepitaxial Growth of Nonpolar-face AlN on SiC Substrates by Plasma-assisted Molecular-beam Epitaxy
Metalorganic Vapor Phase Epitaxial Growth of Nonpolar Al(Ga,In)N Films on Lattice-Mismatched Substrates
GaN Films and Quantum Wells with Nonpolar Surfaces: Growth and Structural Properties
Properties
GaN Films and (In,Ga)N/GaN Multiple Quantum Wells with Nonpolar Surfaces: Optical Polarization Properties
Luminescence of GaN Layers Grown in Nonpolar Directions
Optical Phonons in a-plane GaN under Anisotropic Strain
Defects Formed in Nonpolar GaN Grown on SiC and Al2O3 and their Reduction in Pendeo-epitaxial and Laterally Overgrown GaN Layers
Defects and Interfacial Structure of a-plane GaN on r-plane Sapphire
Nonpolar Heterostructures and Devices
Nonpolar Nitride Heterostructures and Devices grown by MOCVD
Growth, Structural, and Optical Properties of a-plane GaN Quantum Dots in AlN
Semipolar InGaN/GaN Quantum Wells for Highly Functional Light Emitters